当前位置:网赌 > 产品与解决方案 > 螺旋式半导体器件 > 出口型-快速可控硅 > K25RIA出口型-快速可控硅

K25RIA出口型-快速可控硅

K25RIA出口型-快速可控硅

FEATURES TYPICAL APPLICATIONS
1). Improved glass passivation for high reliability 1). Medium power switching
and exceptional stability at high temperature 2). Phase control applications
2). High di/dt and dv/dt capabilities 3). Can be supplied to meet stringent military
3). Standard package aerospace and other high-reliability requirements
4). Low thermal resistance
5). Metric threads version available
6). Types up to 1600V VDRM/ VRRM
 
MAJOR RATINGS AND CHARACTERISTICS
Parameters K25RIA Unit
10 to120 140 to160
IF(AV)   25 25 A
@ TC 85 85
IF(RMS)   40 40 A
IFSM @ 50Hz 420 398 A
@ 60Hz 440 415 A
I2t @ 50Hz 867 795 A2s
@ 60Hz 790 725 A2s
VDRM/VRRM   100 to 1200 1400 to 1600 V
Tq typical 110 μs
TJ   - 65 to 125
 
ELECTRICAL SPECIFICATIONS
1). Voltage Ratings
Type number Voltage Code VDRM/VRRM, maximum
repetitive peak
reverse voltage *(1)
VRSM, maximum non-
repetitive peak
reverse voltage *(2)
IDRM/IRRM max.
@ TJ = TJ max
    V V mA
K25RIA 10 100 150 20
20 200 300 10
40 400 500
60 600 700
80 800 900
100 1000 1100
120 1200 1300
140 1400 1500
160 1600 1700
*(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/μs
*(2) For voltage pulses with tp ≤ 5ms
 
 
2). Forward Conduction
 
Parameters K25RIA Unit Conditions
10to120 140to160
IT(AV) Max. average forward current
@ Case temperature
25 25 A 180° conduction, half sine wave
85 85
IT(RMS) Max. RMS forward current 40 40 A  
ITSM Max. peak, one-cycle forward,
non-repetitive surge current
420 398 A t = 10ms No voltage Sinusoidal half wave,
Initial TJ = TJ max.
440 415 t = 8.3ms reapplied
350 335 t = 10ms 100% VRRM
370 350 t = 8.3ms reapplied
I2t Maximum I2t for fusing 867 795 A2s t = 10ms No voltage
790 725 t = 8.3ms reapplied
615 560 t = 10ms 100% VRRM
560 510 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 8670 7950 A2√S t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage 0.99 0.99 V (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
VT(TO)2 High level value of threshold voltage 1.40 1.15 (I > π x IF(AV)), TJ = TJ max.
rt1 Low level value of forward slope resistance 10.1 11.73 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
rt2 High level value of forward slope resistance 5.7 10.05 (I > π x IF(AV)), TJ = TJ max.
VTM Max. forward voltage drop 1.71 - V Ipk= 50A, TJ = 25℃ tp = 10ms sine pulse
- 180
IH Maximum holding current 130 mA TJ = 25°C, anode supply 12V resistive load
IL Typical latching current 200
di/dt Max. rate of rise of turned-on current
VDRM ≤ 600V
VDRM ≤ 800V
VDRM ≤ 1000V
VDRM ≤ 1600V
  A/μs TJ = TJ max., VDM = rated VDRM Gate pulse = 20V,
15Ω, tp = 6μs, tr = 0.1μs max.
ITM = (2x rated di/dt) A
200
180
160
150
tgt Typical turn-on time 0.9 μs TJ = 25℃, at = rated VDRM/VRRM, TJ = 125℃
trr Typical reverse recovery time 4 TJ = TJ max., ITM = IT(AV), p > 200μs, di/dt = -10A/μs
tq Typical turn-off time 110 TJ = TJ max., ITM = IT(AV), tp > 200μs, VR = 100V,
di/dt = -10A/μs, dv/dt = 20V/μs linear to 67% VDRM,
gate bias 0V-100W
dv/dt Max. critical rate of rise of 100   TJ = TJ max. linear to 100% rated VDRM
off-state voltage 300 (*) TJ = TJ max. linear to 67% rated VDRM
(*) tq = 10μsup to 600V, tq = 30μs up to 1600V available on special request.
(**) Available with: dv/dt = 1000V/μs, to complete code add S90 i.e. K16RIA120S90
 
 
3). Triggering
 
Parameters K25RIA Unit Conditions
PGM Maximum peak gate power 8.0 W TJ = TJ max.
PG(AV) Maximum average gate power 2.0
IGM Max. peak positive gate current 1.5 A TJ = TJ max.
-VGM Maximum peak negative gate voltage 10 V TJ = TJ max.
IGT DC gate current required to trigger 90 mA
 
TJ = - 65℃ Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
60 TJ = - 25℃
35 TJ = - 125℃
VGT DC gate voltage required to trigger 3.0   TJ = - 65℃  
2.0 V TJ = - 25℃  
1.0 V TJ = - 125℃  
IGD DC gate current not to trigger 2.0 mA TJ = TJ max., VDRM = rated value
VGD DC gate voltage not to trigger 0.2 V TJ = TJ max Max. gate current/ voltage
not to trigger is the max.
value which. will not trigger
any unit with rated V DRM
anode-to-cathode applied
VDRM = rated value
TJ Max. operating temperature range - 65 to 125  
Tstg Max. storage temperature range - 65 to 125
RthJC Max. thermal resistance, junction to case 0.75 K/W DC operation
RthCS Max. thermal resistance, case to heatsink 0.35 K/W Mounting surface, smooth, flat and greased
T Mounting torque
 
to nut to devic    
20(27.5) 25 lbf-in Lubricated threads
0.23(0.32) 0.29 kgf.m (Non-lubricated threads)
2.3(3.1) 2.8 Nm  
wt Approximate weight 14 (0.49) g (oz) See Outline Table
  Case style TO-65    
 
ΔRthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.17 0.13 K/W TJ= TJ max.
120° 0.21 0.22
90° 0.27 0.30
60° 0.40 0.42
30° 0.69 0.70
 
 
PERFORMANCE CURVES FIGURE
Fig.1 – CurrentRatings Characteristic Fig.2 - CurrentRatings Characteristic
Fig.3 – On-state Power Loss Characteristics
Fig.4 – On-state Power Loss Characteristics
Fig.5 –Maximum Non-Repetitive Surge Current Fig.6 –Maximum Non-Repetitive Surge Current
Fig.7 – Forward Voltage Drop Characteristics
Fig.8 – Current Ratings Characteristics Fig.9 – Current Ratings Characteristics
Fig.10 – on-state Power Loss Characteristics
Fig.11 – on-state Power Loss Characteristics
Fig.12 – Maximum Non-Repetitive Surge Current Fig.13 – Maximum Non-Repetitive Surge Current
Fig.14 – Forward Voltage Drop Characteristics
Fig.15 –Thermal Impedance ZthJC Characteristics
Fig.16 – Gate Characteristics
 
OUTLINE
 
Baidu
sogou