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K50RIA出口型-快速可控硅

K50RIA出口型-快速可控硅

 

FEATURES TYPICAL APPLICATIONS
1). High current rating 1). Phase control applications in converters
2). Excellent dynamic characteristics 2). Lighting circuits
3). dv/dt = 1000V/μs option 3). Battery charges
4). Superior surge capabilities 4). Regulated power supplies and temperature
5). Standard package    and speed control circuit
6). Metric threads version available 5). Can be supplied to meet stringent military,
7). Types up to 1600V VDRM/ VRRM aerospace and other high-reliability
  requirements
MAJOR RATINGS AND CHARACTERISTICS
Parameters K50RIA Unit
10 to120 140 to160
IF(AV)   50 50 A
@ TC 94 90
IF(RMS)   80 80 A
IFSM @ 50Hz 1430 1200 A
@ 60Hz 1490 1257 A
I2t @ 50Hz 10.18 7.21 KA2s
@ 60Hz 9.30 6.58 A2s
VDRM/VRRM   100 to 1200 1400 to 1600 V
Tq typical 110 μs
TJ   - 40 to 125
 
 
ELECTRICAL SPECIFICATIONS
1). Voltage Ratings
Type number Voltage Code VDRM/VRRM, maximum
repetitive peak
reverse voltage *(1)
VRSM, maximum non-
repetitive peak
reverse voltage *(2)
IDRM/IRRM max.
@ TJ = TJ max
    V V mA
K50RIA 10 100 150 15
20 200 300
40 400 500
60 600 700
80 800 900
100 1000 1100
120 1200 1300
140 1400 1500
160 1600 1700
*(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/μs
*(2) For voltage pulses with tp ≤ 5ms
 
 
2). Forward Conduction
 
Parameters K50RIA Unit Conditions
10to120 140to160
IT(AV) Max. average forward current
@ Case temperature
50 50 A 180° conduction, half sine wave
94 90
IT(RMS) Max. RMS forward current 80 80 A  
ITSM Max. peak, one-cycle forward,
non-repetitive surge current
1430 1200 A t = 10ms No voltage Sinusoidal half wave,
Initial TJ = TJ max.
1490 1257 t = 8.3ms reapplied
1200 1010 t = 10ms 100% VRRM
1255 1057 t = 8.3ms reapplied
I2t Maximum I2t for fusing 10.18 7.21 KA2s t = 10ms No voltage
9.30 6.58 t = 8.3ms reapplied
7.20 5.10 t = 10ms 100% VRRM
6.56 4.65 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 101.8 72.1 KA2√S t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage 0.94 1.02 V (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
VT(TO)2 High level value of threshold voltage 1.08 1.17 (I > π x IF(AV)), TJ = TJ max.
rt1 Low level value of forward slope resistance 4.08 4.78 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
rt2 High level value of forward slope resistance 3.34 3.97 (I > π x IF(AV)), TJ = TJ max.
VTM Max. forward voltage drop 1.60 1.78 V Ipk= 50A, TJ = 25℃ tp = 10ms sine pulse
IH Maximum holding current 200 mA TJ = 25°C, anode supply 12V resistive load
IL Typical latching current 400
di/dt Max. rate of rise of turned-on current   A/μs TJ = TJ max., VDM = rated VDRM
VDRM ≤ 600V 200 Gate pulse = 20V,15Ω, tp = 6μs,
VDRM ≤ 1600V 100 tr = 0.1μs max.ITM = (2x rated di/dt) A
td Typical reverse recovery time 0.9 μs TC = 25℃ VDM = rated VDRM ITM = 10A dc
resistive circuit Gate pulse = 10V, 15Ω
source, tp = 20μs
tq Typical turn-off time 110 TC = 125℃, ITM = 50A, reapplied dv/dt
= 20V/μs dir/dt = -10A/μs, VR=50V
dv/dt Max. critical rate of rise of 200 V/μs TJ = TJ max. linear to 100% rated VDRM
off-state voltage 500 (*) TJ = TJ max. linear to 67% rated VDRM
*) Available with: dv/dt = 1000V/μs, to complete code add S90 i.e. K50RIA120S90.
 
 
3). Triggering

 

Parameters K50RIA Unit Conditions
PGM Maximum peak gate power 10 W TJ = TJ max.
PG(AV) Maximum average gate power 2.5
IGM Max. peak positive gate current 2.5 A TJ = TJ max.
+VGM Max. peak positive gate current 20 V TJ = TJ max.
-VGM Maximum peak negative gate voltage 10    
IGT DC gate current required to trigger 250 mA
 
TJ = - 40℃ Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
100 TJ = - 25℃
50 TJ = - 125℃
VGT DC gate voltage required to trigger 3.5   TJ = - 40℃
2.5 V TJ = - 25℃
IGD DC gate current not to trigger 5.0 mA TJ = TJ max., Max. gate current/ voltage
not to trigger is the max.
value which. will not trigger
any unit with rated V DRM
anode-to-cathode applied
        VDRM = rated value
VGD DC gate voltage not to trigger  
0.2
V TJ = TJ max
TJ Max. operating temperature range - 40 to 125  
Tstg Max. storage temperature range - 40 to 125
RthJC Max. thermal resistance, junction to case 0.35 K/W DC operation
RthCS Max. thermal resistance, case to heatsink 0.25 K/W Mounting surface, smooth, flat and greased
T Mounting torque Min. 2.8 (25) Nm Non-lubricated threads
Max. 3.4 (30) lbf-in
wt Approximate weight 28 (1.0) g (oz)  
  Case style TO-65 See Outline Table
 
ΔRthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.078 0.057 K/W TJ= TJ max.
120° 0.094 0.098
90° 0.120 0.130
60° 0.176 0.183
30° 0.294 0.296
 

 
PERFORMANCE CURVES FIGURE
 


Fig.1 – CurrentRatings Characteristic Fig.2 - CurrentRatings Characteristic
Fig.3 – On-state Power Loss Characteristics Fig.4 – On-state Power Loss Characteristics
Fig.5 –Maximum Non-Repetitive Surge Current Fig.6 –Maximum Non-Repetitive Surge Current
Fig.7 – Current Ratings Characteristics Fig.8 – Current Ratings Characteristics
Fig.9 – On-state Power Loss Characteristics Fig.10 – On-state Power Loss Characteristics
Fig.11 – Maximum Non-Repetitive Surge Current Fig.12 – Maximum Non-Repetitive Surge Current
Fig.13 – Forward Voltage Drop Characteristics Fig.14 – Forward Voltage Drop Characteristics
Fig.15 –Thermal Impedance ZthJC Characteristics
Fig.16 – Gatr Characteristics
 
OUTLINE
 
 
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