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KST230S出口型-快速可控硅

KST230S出口型-快速可控硅

FEATURES TYPICAL APPLICATIONS
1). Center amplifying gate ). DC motor controls
2). Hermetic metal case with ceramic insulator 2). Controlled DC power supplies
   (Also available with glass-metal seal up to 1200V) 3). AC controllers
3). International standard case TO-209AB (TO-93)  
4). Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5
5). Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
 
MAJOR RATINGS AND CHARACTERISTICS
Parameters KST230S Unit
IF(AV)   230 A
@ TC 85
IF(RMS)   360 A
IFSM @ 50Hz 5700 A
@ 60Hz 5970 A
I2t @ 50Hz 163 KA2s
@ 60Hz 143 KA2s
VDRM/VRRM   400 to 1600 V
Tq typical 100 μs
TJ   40 to 125
 
ELECTRICAL SPECIFICATIONS
1). Voltage Ratings
 
Type number Voltage Code VDRM/VRRM, maximum
repetitive peak
reverse voltage
VRSM, maximum non-
repetitive peak
reverse voltage
IDRM/IRRM max.
@ TJ = TJ max
    V V mA
KST230S 04 400 500 30
08 800 900
12 1200 1300
14 1400 1500
16 1600 1700


2). Forward Conduction
 
Parameters KST230S Unit Conditions
IT(AV) Max. average forward current
@ Case temperature
230 A 180° conduction, half sine wave
85
IT(RMS) Max. RMS forward current 360 A DC @ 78℃ case temperature
ITSM Max. peak, one-cycle forward,
non-repetitive surge current
5700 A t = 10ms No voltage Sinusoidal half wave,
Initial TJ = TJ max.
5970 t = 8.3ms reapplied
4800 t = 10ms 100% VRRM
5000 t = 8.3ms reapplied
I2t Maximum I2t for fusing 163 KA2s t = 10ms No voltage
148 t = 8.3ms reapplied
115 t = 10ms 100% VRRM
105 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 1630 KA2√S t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage 0.92 V (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
VT(TO)2 High level value of threshold voltage 0.98 (I > π x IF(AV)), TJ = TJ max.
rt1 Low level value of forward slope resistance 0.88 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
rt2 High level value of forward slope resistance 0.81 (I > π x IF(AV)), TJ = TJ max.
VTM Max. forward voltage drop 1.55 V IPK= 720A, TJ = TJ max, tp = 10ms sine pulse
IH Maximum holding current 600 mA TJ = 25°C, anode supply 12V resistive load
IL Typical latching current 1000 (300)
di/dt Max. rate of rise of turned-on current 1000 A/μs Gate drive 20V, 20Ω, tr ≤ 1μs
VDRM ≤ 600V TJ = TJ max., anode voltage ≤ 80% VDRM
td Typical reverse recovery time 1.0 μs Gate current 1A, dig/dt= 1A/μs
Vd = 0.67% V , T = 25℃VDRM, Tj =25℃
tq Typical turn-off time 100 ITM= 175A, TJ = TJ max, di/dt = 20A/μs, VR= 50V
dv/dt = 20V/μs, Gate 0V 100Ω, tp = 500μs
dv/dt Max. critical rate of rise of 500 V/μs TJ = TJ max. linear to 80% rated VDRM
  off-state voltage
IDRM Max. peak reverse and off-state 30 mA TJ = TJ max. rated VDRM/VRRM applied
IRRM leakage current


3). Triggering
 
Parameters KST230S Unit Conditions
PGM Maximum peak gate power 10.0 W TJ = TJ max.
PG(AV) Maximum average gate power 2.0
IGM Max. peak positive gate current 3.0 A TJ = TJ max.
+VGM Maximum peak negative gate voltage 20 V TJ = TJ max.
-VGM Maximum peak negative gate voltage 5.0    
IGT DC gate current required to trigger TYP. MAX. mA   Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
180 - TJ = - 40℃
90 150 TJ = - 25℃
40 - TJ = - 125℃
VGT DC gate voltage required to trigger 2.9 - V TJ = - 40℃
1.8 3.0 TJ = - 25℃
1.2 - TJ = - 125℃
IGD DC gate current not to trigger 10 mA TJ = TJ max., Max. gate current/ voltage
not to trigger is the max.
value which. will not trigger
any unit with rated V DRM
anode-to-cathode applied
VGD DC gate voltage not to trigger 0.25 V TJ = TJ max
TJ Max. operating temperature range - 40 to 125  
Tstg Max. storage temperature range - 40 to 150
RthJC Max. thermal resistance, junction to case 0.105 K/W DC operation
RthCS Max. thermal resistance, case to heatsink 0.04 K/W Mounting surface, smooth, flat and greased
T Mounting torque
 
31 (275) Nm Non-lubricated threads
24.5 (210) lbf-in Lubricated threads
wt Approximate weight 280 g (oz)  
  Case style TO-118 See Outline Table
 

ΔRthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.016 0.012 K/W TJ = TJ max.
120° 0.019 0.020
90° 0.025 0.027
60° 0.036 0.037
30° 0.060 0.060


PERFORMANCE CURVES FIGURE

Fig.1 –CurrentRatings Characteristic Fig.2 - CurrentRatings Characteristics
Fig.3 – On-state Power Loss Characteristics
Fig.4 – On-state Power Loss Characteristics
Fig.5 – Maximum Non-Repetitive Surge Current Fig.6 – Maximum Non-Repetitive Surge Current
Fig.7 – On-state Power Loss Characteristics
Fig.8 –Thermal Impedance ZthJC Characteristics
Fig.9 –Gate Characteristics

  
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